Correlation between sprayed CuInSe2 thin films properties and deposition temperature : Solar Energy Generation and Energy Storage
Identifieur interne : 000F93 ( Main/Repository ); précédent : 000F92; suivant : 000F94Correlation between sprayed CuInSe2 thin films properties and deposition temperature : Solar Energy Generation and Energy Storage
Auteurs : RBID : Pascal:13-0270063Descripteurs français
- Pascal (Inist)
- Dépôt projection, Diffraction RX, Polycristal, Orientation préférentielle, Composition chimique, Analyse chimique, Force interatomique, Morphologie surface, Structure surface, Cristallite, Conductivité électrique, Bande interdite, Composé ternaire, Séléniure de cuivre, Séléniure d'indium, Couche mince, Verre, Structure chalcopyrite, Cuivre, 8105K, 7363, CuInSe2, Pyrolyse par projection.
- Wicri :
English descriptors
- KwdEn :
- Chalcopyrite structure, Chemical analysis, Chemical composition, Copper, Copper selenides, Crystallites, Electrical conductivity, Energy gap, Glass, Indium selenides, Interatomic forces, Polycrystal, Preferred orientation, Spray coating, Spray pyrolysis, Surface morphology, Surface structure, Ternary compound, Thin film, X ray diffraction.
Abstract
Copper indium diselenide thin films were prepared by spray pyrolysis technique on glass substrates at different deposition temperatures ranging from 150 to 300 °C. XRD patterns of sprayed CuInSe2 films showed that all films are polycrystalline with a chalcopyrite structure and a preferential orientation along the (112) direction. The chemical composition analysis showed that the Cu/In ratio increased with increasing the deposition temperature. The atomic force micrographs show that the elaborated films have a uniform surface morphology with a homogeneous distribution of crystallites. The electrical conductivity of the prepared films increased with increasing the deposition temperature. The energy band gap of prepared films decreased with increasing Cu/In ratio.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Correlation between sprayed CuInSe<sub>2</sub> thin films properties and deposition temperature : Solar Energy Generation and Energy Storage</title><author><name sortKey="Mahmoud, F A" uniqKey="Mahmoud F">F. A. Mahmoud</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Renewable Energy Group, Center of Excellence for Advanced Sciences, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Dokki, Giza 12311</wicri:noRegion></affiliation></author><author><name sortKey="Boshta, M" uniqKey="Boshta M">M. Boshta</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics Department, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Dokki, Giza 12311</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Renewable Energy Group, Center of Excellence for Advanced Sciences, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Dokki, Giza 12311</wicri:noRegion></affiliation></author><author><name sortKey="Sayed, M H" uniqKey="Sayed M">M. H. Sayed</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Solid State Physics Department, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Dokki, Giza 12311</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Renewable Energy Group, Center of Excellence for Advanced Sciences, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Égypte</country><wicri:noRegion>Dokki, Giza 12311</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0270063</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0270063 INIST</idno><idno type="RBID">Pascal:13-0270063</idno><idno type="wicri:Area/Main/Corpus">000933</idno><idno type="wicri:Area/Main/Repository">000F93</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4522</idno><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><title level="j" type="main">Journal of materials science. Materials in electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chalcopyrite structure</term><term>Chemical analysis</term><term>Chemical composition</term><term>Copper</term><term>Copper selenides</term><term>Crystallites</term><term>Electrical conductivity</term><term>Energy gap</term><term>Glass</term><term>Indium selenides</term><term>Interatomic forces</term><term>Polycrystal</term><term>Preferred orientation</term><term>Spray coating</term><term>Spray pyrolysis</term><term>Surface morphology</term><term>Surface structure</term><term>Ternary compound</term><term>Thin film</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dépôt projection</term><term>Diffraction RX</term><term>Polycristal</term><term>Orientation préférentielle</term><term>Composition chimique</term><term>Analyse chimique</term><term>Force interatomique</term><term>Morphologie surface</term><term>Structure surface</term><term>Cristallite</term><term>Conductivité électrique</term><term>Bande interdite</term><term>Composé ternaire</term><term>Séléniure de cuivre</term><term>Séléniure d'indium</term><term>Couche mince</term><term>Verre</term><term>Structure chalcopyrite</term><term>Cuivre</term><term>8105K</term><term>7363</term><term>CuInSe2</term><term>Pyrolyse par projection</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Verre</term><term>Cuivre</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Copper indium diselenide thin films were prepared by spray pyrolysis technique on glass substrates at different deposition temperatures ranging from 150 to 300 °C. XRD patterns of sprayed CuInSe<sub>2</sub> films showed that all films are polycrystalline with a chalcopyrite structure and a preferential orientation along the (112) direction. The chemical composition analysis showed that the Cu/In ratio increased with increasing the deposition temperature. The atomic force micrographs show that the elaborated films have a uniform surface morphology with a homogeneous distribution of crystallites. The electrical conductivity of the prepared films increased with increasing the deposition temperature. The energy band gap of prepared films decreased with increasing Cu/In ratio.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4522</s0></fA01><fA03 i2="1"><s0>J. mater. sci., Mater. electron.</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Correlation between sprayed CuInSe<sub>2</sub> thin films properties and deposition temperature : Solar Energy Generation and Energy Storage</s1></fA08><fA11 i1="01" i2="1"><s1>MAHMOUD (F. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>BOSHTA (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>SAYED (M. H.)</s1></fA11><fA14 i1="01"><s1>Solid State Physics Department, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Renewable Energy Group, Center of Excellence for Advanced Sciences, National Research Center</s1><s2>Dokki, Giza 12311</s2><s3>EGY</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA20><s1>448-451</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22352</s2><s5>354000503651630030</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0270063</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Copper indium diselenide thin films were prepared by spray pyrolysis technique on glass substrates at different deposition temperatures ranging from 150 to 300 °C. XRD patterns of sprayed CuInSe<sub>2</sub> films showed that all films are polycrystalline with a chalcopyrite structure and a preferential orientation along the (112) direction. The chemical composition analysis showed that the Cu/In ratio increased with increasing the deposition temperature. The atomic force micrographs show that the elaborated films have a uniform surface morphology with a homogeneous distribution of crystallites. The electrical conductivity of the prepared films increased with increasing the deposition temperature. The energy band gap of prepared films decreased with increasing Cu/In ratio.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03C</s0></fC02><fC02 i1="02" i2="X"><s0>001D11C06</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15R</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="05" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dépôt projection</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Spray coating</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Spritzbeschichten</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Depósito proyección</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Diffraction RX</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>X ray diffraction</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="GER"><s0>Roentgenbeugung</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Difracción RX</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Polycristal</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Polycrystal</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="GER"><s0>Polykristall</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Policristal</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="GER"><s0>Bevorzugte Orientierung</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composition chimique</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Chemical composition</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Chemische Zusammensetzung</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Composición química</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Analyse chimique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Chemical analysis</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="GER"><s0>Chemische Analyse</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Análisis químico</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Force interatomique</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Interatomic forces</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Surface morphology</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Structure surface</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Surface structure</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="GER"><s0>Oberflaechenbeschaffenheit</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estructura superficie</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Cristallite</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Crystallites</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="GER"><s0>Kristallit</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Cristalita</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Conductivité électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Electrical conductivity</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="GER"><s0>Elektrische Leitfaehigkeit</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Conductividad eléctrica</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Bande interdite</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Energy gap</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="GER"><s0>Energieluecke</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Banda prohibida</s0><s5>12</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Ternary compound</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>22</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Couche mince</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Thin film</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="GER"><s0>Duennschicht</s0><s5>25</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Capa fina</s0><s5>25</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Verre</s0><s5>26</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Glass</s0><s5>26</s5></fC03><fC03 i1="17" i2="X" l="GER"><s0>Glas</s0><s5>26</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Vidrio</s0><s5>26</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Structure chalcopyrite</s0><s5>27</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Chalcopyrite structure</s0><s5>27</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Estructura calcopirita</s0><s5>27</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="19" i2="X" l="GER"><s0>Kupfer</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>8105K</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>7363</s0><s4>INC</s4><s5>57</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>CuInSe2</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Pyrolyse par projection</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Spray pyrolysis</s0><s4>CD</s4><s5>96</s5></fC03><fN21><s1>259</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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